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| IPD50N06S2-14 OptiMOS(R) Power-Transistor Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 14.4 50 V m A PG-TO252-3-11 Type IPD50N06S2-14 Package PG-TO252-3-11 Marking PN0614 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=50A Value 501) 49 200 240 20 136 -55 ... +175 55/175/56 mJ V W C Unit A Rev. 1.1 page 1 2008-10-21 IPD50N06S2-14 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=80 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=32 A, 55 2.1 3.0 0.01 4.0 1 A V 1.1 100 75 50 K/W - 1 1 10.8 100 100 14.4 nA m Rev. 1.1 page 2 2008-10-21 IPD50N06S2-14 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s V R=30 V, I F=I S, di F/dt =100 A/s 1 50 200 1.3 V A Q gs Q gd Qg V plateau V DD=44 V, I D=50 A, V GS=0 to 10 V 8 16 39 5.4 11 24 52 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=50 A, R G=7.5 V GS=0 V, V DS=25 V, f =1 MHz 1485 464 167 13 29 30 19 ns pF Reverse recovery time2) t rr - 45 - ns Reverse recovery charge2) 1) Q rr - 74 - nC Current is limited by bondwire; with an RthJC=1.1 K/W the chip is able to carry 69 A. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2008-10-21 IPD50N06S2-14 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 10 V 160 140 120 100 50 40 P tot [W] 80 60 40 I D [A] 0 50 100 150 200 30 20 10 20 0 0 0 50 100 T C [C] 150 200 T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 1 s 100 100 100 s 10 s Z thJC [K/W] I D [A] 0.1 1 ms 10-1 0.05 0.02 0.01 10 10 -2 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.1 page 4 2008-10-21 IPD50N06S2-14 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 200 10 V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 C parameter: V GS 50 5.5 V 6V 160 7V 40 6.5 V R DS(on) [m] 120 I D [A] 30 80 6V 40 5.5 V 20 6.5 V 5V 7V 10 V 0 0 1 2 3 4 5 6 7 10 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 100 90 80 8 Typ. Forward transconductance g fs = f(I D); T j = 25C parameter: g fs 80 70 60 70 60 50 40 30 20 20 10 0 2 3 4 5 6 7 175 C 25 C -55 C 50 g fs [S] I D [A] 40 30 10 0 0 20 40 60 80 100 V GS [V] I D [A] Rev. 1.1 page 5 2008-10-21 IPD50N06S2-14 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 32 A; VGS = 10 V 30 10 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 25 3.5 20 400 A 3 R DS(on) [m] 15 V GS(th) [V] 80 A 2.5 10 2 5 1.5 0 -60 -20 20 60 100 140 180 1 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 12 Typical forward diode characteristicis IF = f(VSD) parameter: T j 104 103 102 Ciss C [pF] 103 Coss I F [A] 101 175 C 25 C Crss 102 0 5 10 15 20 25 30 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V DS [V] V SD [V] Rev. 1.1 page 6 2008-10-21 IPD50N06S2-14 13 Typical avalanche energy E AS = f(T j) parameter: I D 1000 14 Typ. gate charge V GS = f(Q gate); I D = 50 A pulsed 12 12.5 A 800 10 8 600 11 V E AS [mJ] V GS [V] 44 V 6 25 A 400 4 50 A 200 2 0 25 50 75 100 125 150 175 0 0 10 20 30 40 T j [C] Q gate [nC] 15 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 16 Gate charge waveforms 66 64 62 60 V GS Qg V BR(DSS) [V] 58 56 54 Q gate 52 Q gs Q gd 50 -60 -20 20 60 100 140 180 T j [C] Rev. 1.1 page 7 2008-10-21 IPD50N06S2-14 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2008 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2008-10-21 IPD50N06S2-14 Revision History Version Date Changes Revision 1.1 Correction of RthJC from 3.4K/W 20.10.2008 to 1.1K/W Rev. 1.1 page 9 2008-10-21 |
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